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| S T M8457 S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 6A R DS (ON) ( m W ) Max ID -5A R DS (ON) ( m W ) Max 26 @ V G S = 10V 33 @ V G S = 4.5V D1 8 42 @ V G S = -10V 62 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 40 20 6 5.1 28 1.7 2 1.44 -55 to 150 -40 20 -5 -4.2 -20 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8457 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 5A VGS =4.5V, ID=4A VDS = 5V, VGS = 10V VDS = 5V, ID = 5A Min Typ C Max Unit 40 1 10 1.0 1.8 20 27 20 15 750 125 75 3.0 26 33 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm VDS =24V, ID =5A,VGS =10V VDS =24V, ID =5A,VGS =4.5V VDS =24V, ID = 5 A VGS =4.5V 13 11 37 10 12.5 6.4 1.8 3.6 ns ns ns ns nC nC nC nC S T M8457 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -4A VGS = -4.5V, ID= -3A VDS =-5V, VGS = -10V VDS = -5V, ID = - 4A Min Typ C Max Unit -40 -1 10 -1.0 -1.8 35 54 16 10 960 142 75 -3.0 42 V uA uA V m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 62 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VD = -20V ID = -1A VGEN = -10V R GE N = 3.3 ohm VDS=-24V,ID=-4A,VGS=-10V VDS=-24V,ID=-4A,VGS=-4.5V VDS =-24V, ID = - 4A VGS =-4.5V 3 15 13 66 25 15.6 7.7 2.3 4.3 ns ns ns ns nC nC nC nC S T M8457 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.78 -0.77 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 30 V G S =4V 24 12 V G S =8V V G S =10V 15 ID, Drain C urrent(A) 18 12 ID, Drain C urrent (A) V G S =4.5V 9 6 T j=125 C -55 C 6 V G S =3V 3 0 25 C 0 0.8 1.6 2.4 3.2 4.0 4.8 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 45 2.0 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 40 1.8 1.6 1.4 1.2 1.0 0 V G S =4.5V ID=4A R DS (on) (m W) 35 V G S =4.5V 30 25 V G S =10V 20 1 V G S =10V ID=5A 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T M8457 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.20 ID=250uA 1.15 1.10 1.00 0.97 0.96 0.95 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=5A Is , S ource-drain current (A) 100 10.0 5.0 25 C 125 C 75 C R DS (on) (m W) 80 60 125 C 40 75 C 20 25 C 0 0 2 4 6 8 10 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8457 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =24V ID=5A 1000 C , C apacitance (pF ) C is s 800 600 400 C os s 200 0 C rs s 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) V DS =20V ,ID=1A V G S =10 V 80 ID, Drain C urrent (A) 100 60 10 10 R Tr TD(off) TD(on) Tf (O DS N) L im it 10 ms 10 1 1s DC 0m s 0.1 0.03 1 1 6 10 60 100 300 600 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T M8457 P-Channel 30 V G S =-6V 15 24 12 V G S =-4.5V V G S =-10V ID, Drain C urrent(A) 18 ID, Drain C urrent (A) V G S =-8V 9 -55 C 6 T j=125 C 3 25 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 12 6 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 120 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 100 1.4 1.3 1.2 1.1 1.0 0 V G S =-10V ID=-4A R DS (on) (m W) 80 V G S =-4.5V 60 40 V G S =-10V 20 1 V G S =-4.5V ID=-3A 1 3 6 9 12 15 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T M8457 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=-4A Is , S ource-drain current (A) 100 10.0 5.0 25 C 125 C 75 C R DS (on) (m W) 80 125 C 60 40 75 C 20 0 25 C 1.0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8457 1500 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =-24V ID=-4A 1250 C , C apacitance (pF ) C is s 1000 750 500 C os s 250 C rs s 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) V DS = -20V,ID= -1A V G S = -10 V 80 ID, Drain C urrent (A) 100 60 10 10 R (O DS TD(off) Tr TD(on) Tf N) L im it 10 10 1s DC ms 0m s 1 0.1 0.03 1 1 6 10 60 100 300 600 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 9 S T M8457 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8457 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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